Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approach

ABSTRACT

Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a bottom-up oxidation approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxidized nanowires. A gate stack is over the vertical arrangement of nanowires and around the one or more oxidized nanowires.

TECHNICAL FIELD

Embodiments of the disclosure are in the field of integrated circuitstructures and processing and, in particular, gate-all-around integratedcircuit structures having depopulated channel structures, and methods offabricating gate-all-around integrated circuit structures havingdepopulated channel structures.

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips. For example, shrinking transistor size allows forthe incorporation of an increased number of memory or logic devices on achip, lending to the fabrication of products with increased capacity.The drive for ever-more capacity, however, is not without issue. Thenecessity to optimize the performance of each device becomesincreasingly significant.

In the manufacture of integrated circuit devices, multi-gatetransistors, such as tri-gate transistors, have become more prevalent asdevice dimensions continue to scale down. In conventional processes,tri-gate transistors are generally fabricated on either bulk siliconsubstrates or silicon-on-insulator substrates. In some instances, bulksilicon substrates are preferred due to their lower cost and becausethey enable a less complicated tri-gate fabrication process. In anotheraspect, maintaining mobility improvement and short channel control asmicroelectronic device dimensions scale below the 10 nanometer (nm) nodeprovides a challenge in device fabrication. Nanowires used to fabricatedevices provide improved short channel control.

Scaling multi-gate and nanowire transistors has not been withoutconsequence, however. As the dimensions of these fundamental buildingblocks of microelectronic circuitry are reduced and as the sheer numberof fundamental building blocks fabricated in a given region isincreased, the constraints on the lithographic processes used to patternthese building blocks have become overwhelming. In particular, there maybe a trade-off between the smallest dimension of a feature patterned ina semiconductor stack (the critical dimension) and the spacing betweensuch features.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates cross-sectional views representing a gate-all-aroundintegrated circuit structure having a depopulated channel structure.

FIG. 2 illustrates cross-sectional views representing anothergate-all-around integrated circuit structure having a depopulatedchannel structure.

FIG. 3 illustrates cross-sectional views representing various operationsin a method of fabricating a gate-all-around integrated circuitstructure having a depopulated channel structure, in accordance with anembodiment of the present disclosure.

FIGS. 4A-4J illustrates cross-sectional views of various operations in amethod of fabricating a gate-all-around integrated circuit structure, inaccordance with an embodiment of the present disclosure.

FIG. 5 illustrates a cross-sectional view of a non-planar integratedcircuit structure as taken along a gate line, in accordance with anembodiment of the present disclosure.

FIG. 6 illustrates cross-sectional views taken through nanowires andfins for a non-endcap architecture (left-hand side (a)) versus aself-aligned gate endcap (SAGE) architecture (right-hand side (b)), inaccordance with an embodiment of the present disclosure.

FIG. 7 illustrate cross-sectional views representing various operationsin a method of fabricating a self-aligned gate endcap (SAGE) structurewith gate-all-around devices, in accordance with an embodiment of thepresent disclosure.

FIG. 8A illustrates a three-dimensional cross-sectional view of ananowire-based integrated circuit structure, in accordance with anembodiment of the present disclosure.

FIG. 8B illustrates a cross-sectional source or drain view of thenanowire-based integrated circuit structure of FIG. 8A, as taken alongthe a-a′ axis, in accordance with an embodiment of the presentdisclosure.

FIG. 8C illustrates a cross-sectional channel view of the nanowire-basedintegrated circuit structure of FIG. 8A, as taken along the b-b′ axis,in accordance with an embodiment of the present disclosure.

FIGS. 9A-9E illustrate three-dimensional cross-sectional viewsrepresenting various operations in a method of fabricating a nanowireportion of a fin/nanowire structure, in accordance with an embodiment ofthe present disclosure.

FIG. 10 illustrates a computing device in accordance with oneimplementation of an embodiment of the disclosure.

FIG. 11 illustrates an interposer that includes one or more embodimentsof the disclosure.

DESCRIPTION OF THE EMBODIMENTS

Gate-all-around integrated circuit structures having depopulated channelstructures, and methods of fabricating gate-all-around integratedcircuit structures having depopulated channel structures, are described.In the following description, numerous specific details are set forth,such as specific integration and material regimes, in order to provide athorough understanding of embodiments of the present disclosure. It willbe apparent to one skilled in the art that embodiments of the presentdisclosure may be practiced without these specific details. In otherinstances, well-known features, such as integrated circuit designlayouts, are not described in detail in order to not unnecessarilyobscure embodiments of the present disclosure. Furthermore, it is to beappreciated that the various embodiments shown in the Figures areillustrative representations and are not necessarily drawn to scale.

Certain terminology may also be used in the following description forthe purpose of reference only, and thus are not intended to be limiting.For example, terms such as “upper”, “lower”, “above”, and “below” referto directions in the drawings to which reference is made. Terms such as“front”, “back”, “rear”, and “side” describe the orientation and/orlocation of portions of the component within a consistent but arbitraryframe of reference which is made clear by reference to the text and theassociated drawings describing the component under discussion. Suchterminology may include the words specifically mentioned above,derivatives thereof, and words of similar import.

Embodiments described herein may be directed to front-end-of-line (FEOL)semiconductor processing and structures. FEOL is the first portion ofintegrated circuit (IC) fabrication where the individual devices (e.g.,transistors, capacitors, resistors, etc.) are patterned in thesemiconductor substrate or layer. FEOL generally covers everything up to(but not including) the deposition of metal interconnect layers.Following the last FEOL operation, the result is typically a wafer withisolated transistors (e.g., without any wires).

Embodiments described herein may be directed to back end of line (BEOL)semiconductor processing and structures. BEOL is the second portion ofIC fabrication where the individual devices (e.g., transistors,capacitors, resistors, etc.) are interconnected with wiring on thewafer, e.g., the metallization layer or layers. BEOL includes contacts,insulating layers (dielectrics), metal levels, and bonding sites forchip-to-package connections. In the BEOL part of the fabrication stagecontacts (pads), interconnect wires, vias and dielectric structures areformed. For modern IC processes, more than 10 metal layers may be addedin the BEOL.

Embodiments described below may be applicable to FEOL processing andstructures, BEOL processing and structures, or both FEOL and BEOLprocessing and structures. In particular, although an exemplaryprocessing scheme may be illustrated using a FEOL processing scenario,such approaches may also be applicable to BEOL processing. Likewise,although an exemplary processing scheme may be illustrated using a BEOLprocessing scenario, such approaches may also be applicable to FEOLprocessing.

One or more embodiments described herein are directed to self-alignedbottom-up oxidation for nanowire transistor channel depopulation andnanoribbon transistor channel depopulation.

To provide context, integration of nanowire and/or nanoribboncomplementary metal oxide semiconductor (CMOS) transistors is faced withthe challenge of creating devices with different strengths. In thecurrent FinFET technology, device strength granularity is achieved byvarying the number of fins in the device channel. This option isunfortunately not easily available for nanowire and nanoribbonarchitectures since the channels are vertically stacked. Thisrequirement is even more punishing for nanowire and/or nanoribbon(NW/NR) structures in a self-aligned stacked CMOS structure where NMOSand PMOS channels are patterned at the same width. Previous attempts toaddress the above issues have included (1) integrating NW/NR deviceswith different channel widths (an option only available for nanoribbonthat requires complex patterning), or (2) subtractively removingwires/ribbon from source/drain or channel regions (an option challengingfor stacked CMOS architectures).

To provide further context, transistors with different drive currentsmay be needed for different circuit types. Embodiments disclosed hereinare directed to achieving different drive currents by de-populating(de-pop) the number of nanowire transistor channels in devicestructures. One or more embodiments provide an approach for deletingdiscrete numbers of wires from a transistor structure. Approaches may besuitable for both ribbons and wires (RAW). Furthermore, transistorleakage current flowing through a sub-fin must be controlled for propercircuit function. Embodiments disclosed herein provide a method forsub-fin isolation for nanowire transistors. For de-pop, technologiesusing FinFETs can de-populate the number of fins in each device toachieve different drive-current strengths. For sub-fin isolation,sub-fin implants are used to dope a sub-fin to reduce leakage. However,since nanowires are stacked and self-aligned, they cannot bede-populated (de-popped) the same ways as fins. Additionally, sub-findopants must be targeted and can back-diffuse into the channel,degrading carrier transport.

In accordance with an embodiment of the present disclosure, describedherein is a process flow for achieving self-aligned bottom-up oxidationnanowire transistor channel de-population and/or sub-fin isolation.Embodiments may include channel de-population of nanowire transistors toprovide for modulation of drive currents in different devices, which maybe needed for different circuits. Embodiments may be implemented as aself-aligned approach allowing deep-scaling for future nanowiretechnologies.

In accordance with an embodiment of the present disclosure, nanowireprocessing of an alternating Si/SiGe stack includes patterning the stackinto fins. Generic dummy gates (which may or may not be poly dummygates) are patterned and etched. During a replacement gate process,NW/NR channels are released in an opened gate trench. Following NW/NRchannel release, a thin film oxidation catalysts layer (e.g., Al₂O₃) isdeposited on the NW/NR channels, e.g., using an atomic layer deposition(ALD) process. In a particular embodiment, a masking film (such as acarbon hardmask (CHM)) is then deposited to fill the gate trench,followed by a recess etch to leave CHM covering the ribbons to beconverted into oxide. The oxidation catalysts layer is then removed fromthe exposed ribbons using a selective wet etchant such as dilutehydrogen fluoride or aqueous ammonium hydroxide-peroxide solution. Thehardmask is then subsequently removed by exposing it to oxygen plasma toleave the oxidation catalyst layer (e.g., Al₂O₃) encapsulating only thebottommost one or more NW/NR channels. The bottommost one or more NW/NRchannels are then selectively converted into an oxide (e.g., a siliconoxide from oxidizing silicon NW/NR channels) by subjecting them to a wetoxidation anneal. Since the oxidation catalyst layer (e.g., Al₂O₃)promotes oxygen diffusion into silicon (Si), the bottommost one or moreNW/NR channels are rapidly converted to oxide (e.g., SiO₂). Theoxidation condition selected may be very mild such that little oxidationoccurs on the upper ribbons that are not encapsulated by the oxidationcatalysts layer. In this way, Si nanowires are oxidized from thebottom-up. Although some embodiments describe the use of Si (wire orribbon) and SiGe (sacrificial) layers, other pairs of semiconductormaterials which can be alloyed and grown epitaxially could beimplemented to achieve various embodiments herein, for example, InAs andInGaAs, or SiGe and Ge. Embodiments described herein enable thefabrication of self-aligned stacked transistors with variable numbers ofactive nanowires or nanoribbons in the channel, and methods to achievesuch structures.

As a comparison of channel depopulation involving source or drainstructure tuning, FIG. 1 illustrates cross-sectional views (gate cut onfin, and fin cut on gate) representing a gate-all-around integratedcircuit structure having a depopulated channel structure.

Referring to FIG. 1, a CMOS integrated circuit structure 100 is formedabove a substrate 102 and includes a lower PMOS region and an upper NMOSregion. The lower PMOS region includes stacked nanoribbons 104A, 104B,104C and 104D. P-type source or drain structures 106 are adjacent thestacked nanoribbons and above an insulating structure 108. A lower gatestructure includes a gate dielectric layer 110 having a P-type gateelectrode 112 thereon. The upper NMOS region includes stackednanoribbons 114A, 114B, 114C and 114D. N-type source or drain structures116 are adjacent the stacked nanoribbons and above an insulatingstructure 118. An upper gate structure includes a gate dielectric layer120 having an N-type gate electrode 122 thereon. Spacers 124 may beadjacent to an uppermost portion of the upper gate structure.

Referring again to FIG. 1, all of the upper stacked nanoribbons 114A,114B, 114C and 114D (e.g., in this case 4) are coupled to the N-typesource or drain structures 116. However, only the upper two stackednanoribbons 104C and 104D are coupled to the P-type source or drainstructures 106, while the lower two stacked nanoribbons 104A and 104Bare not coupled to the P-type source or drain structures 106. Theresulting structure effectively depopulates two of the four channelregions of the P-type portion of the CMOS integrated circuit structure100. However, source or drain 106 depth engineering is required tofabricate CMOS integrated circuit structure 100. It is to be appreciatedthat although the illustrative example of four upper wires and two lowerwires and effectively two depopulated nanowires is depicted anddescribed above, it is to be appreciated that all such wire counts maybe varied.

As a comparison of channel depopulation involving channel count tuning,FIG. 2 illustrates cross-sectional views (gate cut on fin, and fin cuton gate) representing another gate-all-around integrated circuitstructure having a depopulated channel structure.

Referring to FIG. 2, a CMOS integrated circuit structure 200 is formedabove a substrate 202 and includes a lower PMOS region and an upper NMOSregion. The lower PMOS region includes stacked nanoribbons 204A and 204Babove a raised substrate portion 208. P-type source or drain structures206 are adjacent the stacked nanoribbons. A lower gate structureincludes a gate dielectric layer 210 having a P-type gate electrode 212thereon. The upper NMOS region includes stacked nanoribbons 214A, 214B,214C and 214D. N-type source or drain structures 216 are adjacent thestacked nanoribbons and above an insulating structure 218. An upper gatestructure includes a gate dielectric layer 220 having an N-type gateelectrode 222 thereon. Spacers 224 may be adjacent to an uppermostportion of the upper gate structure.

Referring again to FIG. 2, all of the upper stacked nanoribbons 214A,214B, 214C and 214D (e.g., in this case 4) are coupled to the N-typesource or drain structures 216. Also, both of the nanoribbons 204A and204B are coupled to the P-type source or drain structures 206. However,the lower structure only includes two stacked nanoribbons 104A and 104B.The resulting structure effectively depopulates two of four channelregions of the P-type portion of the CMOS integrated circuit structure200. However, channel count engineering is required to fabricate CMOSintegrated circuit structure 200. It is to be appreciated that althoughthe illustrative example of four upper wires and two lower wires andeffectively two depopulated nanowires is depicted and described above,it is to be appreciated that all such wire counts may be varied.

As an example of bottom-up oxidation for channel depopulation, FIG. 3illustrates cross-sectional views representing various operations in amethod of fabricating a gate-all-around integrated circuit structurehaving a depopulated channel structure, in accordance with an embodimentof the present disclosure.

Referring to part (a) of FIG. 3, a method of fabricating an integratedcircuit structure includes forming a vertical arrangement 300 of activenanowires or nanoribbons above a substrate. For example, a lower set ofnanowires 304A, 304B, 304C and 304D and an upper set of nanowires 314A,314B, 314C and 314D are provided as a vertical stack. As explained ingreater detail in other embodiments described below, channel regions ofthe lower set of nanowires 304A, 304B, 304C and 304D and the upper setof nanowires 314A, 314B, 314C and 314D may be exposed during areplacement gate process during which an open trench 303, such as anopen trench formed in a dielectric layer or within dielectric spacers(either scenario represented as 302).

Referring to part (b) of FIG. 3, an oxidation catalyst layer 330 isformed on the lower set of nanowires 304A, 304B, 304C and 304D, and theupper set of nanowires 314A, 314B, 314C and 314D. In one embodiment, theoxidation catalyst layer 330 is further formed along surfaces of thetrench 302, as is depicted. In one embodiment, the oxidation catalystlayer 330 is or includes aluminum oxide. In another embodiment, theoxidation catalyst layer 330 is or includes lanthanum oxide.

Referring to part (c) of FIG. 3, the oxidation catalyst layer 330 ispatterned to confine the oxidation catalyst layer 330 only to thosenanowires selected for channel depopulation. In an embodiment, ahardmask layer 332, such as a carbon-based hardmask layer, is formed intrench 303 on oxidation catalyst layer 330. The hardmask layer 332 isthen recessed to a level slightly above the uppermost nanowire selectedfor oxidation. The portions of oxidation catalyst layer 330 not coveredby the recessed hardmask layer 332 are then removed to form oxidationcatalyst portions 334.

Referring to part (d) of FIG. 3, the hardmask layer 332 is removed. Anoxidation process is then performed. In an embodiment, the oxidationprocess is a process that can oxidize silicon but at a rate that issubstantially enhanced by the presence of oxidation catalyst portions334. In one such embodiment, the oxidation process is enhanced torapidly oxidize nanowires 304A and 304B to form oxidized nanowires 350Aand 350B, respectively, without oxidizing (or only very minimallyoxidizing) nanowires 304C, 304D, 314A, 314B, 34C and 314D. In anembodiment, the oxidation process involves a wet oxidation anneal, e.g.,heating the structure in the presence of water or water vapor. Theapproach effectively enables oxidizing one or more bottommost nanowiresof the vertical arrangement of active nanowires but not one or moreuppermost nanowires of the vertical arrangement of active nanowires.

It is to be appreciated that while six upper nanowires are selected toremain active and two lower nanowires are selected for oxidation on part(d) of FIG. 3, any suitable number of upper active nanowires may beretained while one or more lower nanowires are oxidized to form oxidizednanowires.

It is also to be appreciated that following the processing described inassociation with part (d) of FIG. 3, a permanent gate structure may befabricated in trench 303. In one exemplary embodiment, the permanentgate structure includes a lower gate dielectric and lower P-type gateelectrode thereon, and an upper gate dielectric and upper N-type gateelectrode thereon. In another exemplary embodiment, the permanent gatestructure includes a lower gate dielectric and lower N-type gateelectrode thereon, and an upper gate dielectric and upper P-type gateelectrode thereon. In an embodiment, the permanent gate structure isformed around all NW/NR channels, including the oxidized NW/NR channels.In a particular such embodiment, the oxidation catalyst layer is notremoved, and the remainder is included in the final structure. In otherembodiments, however, the oxidation catalyst layer is removed prior topermanent gate structure fabrication.

With reference again to part (d) of FIG. 3 and the subsequentdescription, in accordance with an embodiment of the present disclosure,an integrated circuit structure includes a vertical arrangement ofnanowires (e.g., 350A, 350B, 304C, 304D, 314A, 314B, 314C and 314D)above a substrate. The vertical arrangement of nanowires has one or moreactive nanowires (e.g., 304C, 304D, 314A, 314B, 314C and 314D) above oneor more oxidized nanowires (e.g., 350A and 350B). A gate stack is overthe vertical arrangement of nanowires and around the one or moreoxidized nanowires (e.g., 350A and 350B).

In an embodiment, the one or more oxidized nanowires (e.g., 350A and350B) have an oxidation catalyst layer 334 thereon, e.g., as a residuallayer or artifact layer remaining from a bottom-up channel depopulationprocess. In one embodiment, the oxidation catalyst layer 334 includesaluminum oxide. In another embodiment, the oxidation catalyst layer 334includes lanthanum oxide.

In an embodiment, the integrated circuit structure includes epitaxialsource or drain structures at ends of the vertical arrangement ofnanowires. In one such embodiment, the epitaxial source or drainstructures are discrete epitaxial source or drain structures, structuralexamples of which are described below. In another such embodiment, theepitaxial source or drain structures are non-discrete epitaxial sourceor drain structures, structural examples of which are described below.In an embodiment, the gate stack has dielectric sidewall spacers, andthe epitaxial source or drain structures are embedded epitaxial sourceor drain structures extending beneath the dielectric sidewall spacers ofthe gate stack, structural examples of which are described below.

In an embodiment, the integrated circuit structure further includes apair of conductive contact structures coupled to the epitaxial source ordrain structures. In one such embodiment, the pair of conductive contactstructures is an asymmetric pair of conductive contact structures,structural examples of which are described below.

In an embodiment, the vertical arrangement of nanowires is over a fin,structural examples of which are described below. In an embodiment, thegate stack includes a high-k gate dielectric layer and a metal gateelectrode.

It is to be appreciated that embodiments described herein may beimplemented to fabricate nanowire and/or nanoribbon structures having adifferent number of active wire/ribbon channel. It is to be appreciatedthat embodiments described herein may involve selective oxidationapproaches to achieve such structures. Embodiments described herein maybe implemented to enable the fabrication of nanowire/nanoribbon-basedCMOS architectures.

In an embodiment, in order to engineer different devices havingdifferent drive-current strengths, a self-aligned depopulation (de-pop)flow can be patterned with lithography so that ribbons and wires (RAW)are de-popped only from specific devices. In an embodiment, the entirewafer may be de-popped uniformly so all devices have same number of RAW.It is to be appreciated that when de-pop is performed through a gatetrench, some an epitaxial (epi) source or drain (S/D) materials may beoxidized from the proximate the gate electrode, which is distinct fromperforming de-pop through a S/D location.

As mentioned above, nanowire release processing may be performed througha replacement gate trench. Examples of such release processes aredescribed below. Additionally, in another aspect, backend (BE)interconnect scaling can result in lower performance and highermanufacturing cost due to patterning complexity. Embodiments describedherein may be implemented to enable front and backside interconnectintegration for nanowire transistors. Embodiments described herein mayprovide an approach to achieve a relatively wider interconnect pitch.The result may be improved product performance and lower patterningcosts. Embodiments may be implemented to enable robust functionality ofscaled nanowire or nanoribbon transistors with low power and highperformance.

One or more embodiments described herein are directed dual epitaxial(EPI) connections for nanowire or nanoribbon transistors using partialsource or drain (SD) and asymmetric trench contact (TCN) depth. In anembodiment, an integrated circuit structure is fabricated by formingsource-drain openings of nanowire/nanoribbon transistors which arepartially filled with SD epitaxy. A remainder of the opening is filledwith a conductive material. Deep trench formation on one of the sourceor drain side enables direct contact to a backside interconnect level.

In an exemplary process flow, FIGS. 4A-4J illustrates cross-sectionalviews of various operations in a method of fabricating a gate-all-aroundintegrated circuit structure, in accordance with an embodiment of thepresent disclosure.

Referring to FIG. 4A, a method of fabricating an integrated circuitstructure includes forming a starting stack 400 which includesalternating silicon germanium layer 404 and silicon layers 406 above afin 402, such as a silicon fin. The silicon layers 406 may be referredto as a vertical arrangement of silicon nanowires. A protective cap 408may be formed above the alternating silicon germanium layer 404 andsilicon layers 406, as is depicted.

Referring to FIG. 4B, a gate stack 410 is formed over the verticalarrangement of nanowires 406. Portions of the vertical arrangement ofnanowires 406 are then released by removing portions of the silicongermanium layer 404 to provide recessed silicon germanium layers 404′and cavities 412, as is depicted in FIG. 4C.

It is to be appreciated that the structure of FIG. 4C may be fabricatedto completion without first performing the deep etch and asymmetriccontact processing described below in association with FIG. 4D. Ineither case (e.g., with or without asymmetric contact processing), in anembodiment, a fabrication process involves use of a process scheme thatprovides a gate-all-around integrated circuit structure having adepopulated channel structure, examples of which are described above inassociation with FIG. 3.

Referring to FIG. 4D, upper gate spacers 414 are formed at sidewalls ofthe gate structure 410. Cavity spacers 416 are formed in the cavities412 beneath the upper gate spacers 414. A deep trench contact etch isthen performed to form trenches 418 and to formed recessed nanowires406′. A sacrificial material 420 is then formed in the trenches 418, asis depicted in FIG. 4E.

Referring to FIG. 4F, a first epitaxial source or drain structure (e.g.,left-hand features 422) is formed at a first end of the verticalarrangement of nanowires 406′. A second epitaxial source or drainstructure (e.g., right-hand features 422) is formed at a second end ofthe vertical arrangement of nanowires 406′. An inter-layer dielectric(ILD) material 424 is then formed at the sides of the gate electrode 410and adjacent to the source or drain structures 422, as is depicted inFIG. 4G.

Referring to FIG. 4H, a replacement gate process is used to form apermanent gate dielectric 428 and a permanent gate electrode 426. In anembodiment, subsequent to removal of gate structure 410 and form apermanent gate dielectric 428 and a permanent gate electrode 426, therecessed silicon germanium layers 404′ are removed to leave upper activenanowires or nanoribbons 406′. In an embodiment, the the recessedsilicon germanium layers 404′ are removed selectively with a wet etchthat selectively removes the silicon germanium while not etching thesilicon layers. Etch chemistries such as carboxylic acid/nitric acid/HFchemistry, and citric acid/nitric acid/HF, for example, may be utilizedto selectively etch the silicon germanium. Halide-based dry etches orplasma-enhanced vapor etches may also be used to achieve the embodimentsherein.

Referring again to FIG. 4H, one or more of the bottommost nanowires ornanoribbons 406′ is then oxidized to form one or more oxidized nanowireor nanoribbons 499, e.g., by an approach described in association withFIG. 3. The permanent gate dielectric 428 and a permanent gate electrode426 is then formed to surround the nanowires or nanoribbons 406′ and theone or more oxidized nanowire or nanoribbons 499.

Referring to FIG. 4I, the ILD material 424 is then removed. Thesacrificial material 420 is then removed from one of the source drainlocations (e.g., right-hand side) to form trench 432, but is not removedfrom the other of the source drain locations to form trench 430.

Referring to FIG. 4J, a first conductive contact structure 434 is formedcoupled to the first epitaxial source or drain structure (e.g.,left-hand features 422). A second conductive contact structure 436 isformed coupled to the second epitaxial source or drain structure (e.g.,right-hand features 422). The second conductive contact structure 436 isformed deeper along the fin 402 than the first conductive contactstructure 434. In an embodiment, although not depicted in FIG. 4J, themethod further includes forming an exposed surface of the secondconductive contact structure 436 at a bottom of the fin 402.

In an embodiment, the second conductive contact structure 436 is deeperalong the fin 402 than the first conductive contact structure 434, as isdepicted. In one such embodiment, the first conductive contact structure434 is not along the fin 402, as is depicted. In another suchembodiment, not depicted, the first conductive contact structure 434 ispartially along the fin 402.

In an embodiment, the second conductive contact structure 436 is alongan entirety of the fin 402. In an embodiment, although not depicted, inthe case that the bottom of the fin 402 is exposed by a backsidesubstrate removal process, the second conductive contact structure 436has an exposed surface at a bottom of the fin 402.

In another aspect, in order to enable access to both conductive contactstructures of a pair of asymmetric source and drain contact structures,integrated circuit structures described herein may be fabricated using aback-side reveal of front-side structures fabrication approach. In someexemplary embodiments, reveal of the back-side of a transistor or otherdevice structure entails wafer-level back-side processing. In contrastto a conventional through-Silicon via TSV-type technology, a reveal ofthe back-side of a transistor as described herein may be performed atthe density of the device cells, and even within sub-regions of adevice. Furthermore, such a reveal of the back-side of a transistor maybe performed to remove substantially all of a donor substrate upon whicha device layer was disposed during front-side device processing. Assuch, a microns-deep TSV becomes unnecessary with the thickness ofsemiconductor in the device cells following a reveal of the back-side ofa transistor potentially being only tens or hundreds of nanometers.

Reveal techniques described herein may enable a paradigm shift from“bottom-up” device fabrication to “center-out” fabrication, where the“center” is any layer that is employed in front-side fabrication,revealed from the back side, and again employed in back-sidefabrication. Processing of both a front side and revealed back side of adevice structure may address many of the challenges associated withfabricating 3D ICs when primarily relying on front-side processing.

A reveal of the back-side of a transistor approach may be employed forexample to remove at least a portion of a carrier layer and interveninglayer of a donor-host substrate assembly. The process flow begins withan input of a donor-host substrate assembly. A thickness of a carrierlayer in the donor-host substrate is polished (e.g., CMP) and/or etchedwith a wet or dry (e.g., plasma) etch process. Any grind, polish, and/orwet/dry etch process known to be suitable for the composition of thecarrier layer may be employed. For example, where the carrier layer is agroup IV semiconductor (e.g., silicon) a CMP slurry known to be suitablefor thinning the semiconductor may be employed. Likewise, any wetetchant or plasma etch process known to be suitable for thinning thegroup IV semiconductor may also be employed.

In some embodiments, the above is preceded by cleaving the carrier layeralong a fracture plane substantially parallel to the intervening layer.The cleaving or fracture process may be utilized to remove a substantialportion of the carrier layer as a bulk mass, reducing the polish or etchtime needed to remove the carrier layer. For example, where a carrierlayer is 400-900 μm in thickness, 100-700 μm may be cleaved off bypracticing any blanket implant known to promote a wafer-level fracture.In some exemplary embodiments, a light element (e.g., H, He, or Li) isimplanted to a uniform target depth within the carrier layer where thefracture plane is desired. Following such a cleaving process, thethickness of the carrier layer remaining in the donor-host substrateassembly may then be polished or etched to complete removal.Alternatively, where the carrier layer is not fractured, the grind,polish and/or etch operation may be employed to remove a greaterthickness of the carrier layer.

Next, exposure of an intervening layer is detected. Detection is used toidentify a point when the back-side surface of the donor substrate hasadvanced to nearly the device layer. Any endpoint detection techniqueknown to be suitable for detecting a transition between the materialsemployed for the carrier layer and the intervening layer may bepracticed. In some embodiments, one or more endpoint criteria are basedon detecting a change in optical absorbance or emission of the back-sidesurface of the donor substrate during the polishing or etchingperformed. In some other embodiments, the endpoint criteria areassociated with a change in optical absorbance or emission of byproductsduring the polishing or etching of the donor substrate back-sidesurface. For example, absorbance or emission wavelengths associated withthe carrier layer etch byproducts may change as a function of thedifferent compositions of the carrier layer and intervening layer. Inother embodiments, the endpoint criteria are associated with a change inmass of species in byproducts of polishing or etching the back-sidesurface of the donor substrate. For example, the byproducts ofprocessing may be sampled through a quadrupole mass analyzer and achange in the species mass may be correlated to the differentcompositions of the carrier layer and intervening layer. In anotherexemplary embodiment, the endpoint criteria is associated with a changein friction between a back-side surface of the donor substrate and apolishing surface in contact with the back-side surface of the donorsubstrate.

Detection of the intervening layer may be enhanced where the removalprocess is selective to the carrier layer relative to the interveninglayer as non-uniformity in the carrier removal process may be mitigatedby an etch rate delta between the carrier layer and intervening layer.Detection may even be skipped if the grind, polish and/or etch operationremoves the intervening layer at a rate sufficiently below the rate atwhich the carrier layer is removed. If an endpoint criteria is notemployed, a grind, polish and/or etch operation of a predetermined fixedduration may stop on the intervening layer material if the thickness ofthe intervening layer is sufficient for the selectivity of the etch. Insome examples, the carrier etch rate: intervening layer etch rate is3:1-10:1, or more.

Upon exposing the intervening layer, at least a portion of theintervening layer may be removed. For example, one or more componentlayers of the intervening layer may be removed. A thickness of theintervening layer may be removed uniformly by a polish, for example.Alternatively, a thickness of the intervening layer may be removed witha masked or blanket etch process. The process may employ the same polishor etch process as that employed to thin the carrier, or may be adistinct process with distinct process parameters. For example, wherethe intervening layer provides an etch stop for the carrier removalprocess, the latter operation may employ a different polish or etchprocess that favors removal of the intervening layer over removal of thedevice layer. Where less than a few hundred nanometers of interveninglayer thickness is to be removed, the removal process may be relativelyslow, optimized for across-wafer uniformity, and more preciselycontrolled than that employed for removal of the carrier layer. A CMPprocess employed may, for example employ a slurry that offers very highselectively (e.g., 100:1-300:1, or more) between semiconductor (e.g.,silicon) and dielectric material (e.g., SiO) surrounding the devicelayer and embedded within the intervening layer, for example, aselectrical isolation between adjacent device regions.

For embodiments where the device layer is revealed through completeremoval of the intervening layer, backside processing may commence on anexposed backside of the device layer or specific device regions therein. In some embodiments, the backside device layer processing includes afurther polish or wet/dry etch through a thickness of the device layerdisposed between the intervening layer and a device region previouslyfabricated in the device layer, such as a source or drain region.

In some embodiments where the carrier layer, intervening layer, ordevice layer backside is recessed with a wet and/or plasma etch, such anetch may be a patterned etch or a materially selective etch that impartssignificant non-planarity or topography into the device layer back-sidesurface. As described further below, the patterning may be within adevice cell (i.e., “intra-cell” patterning) or may be across devicecells (i.e., “inter-cell” patterning). In some patterned etchembodiments, at least a partial thickness of the intervening layer isemployed as a hard mask for back-side device layer patterning. Hence, amasked etch process may preface a correspondingly masked device layeretch.

The above described processing scheme may result in a donor-hostsubstrate assembly that includes IC devices that have a back side of anintervening layer, a back side of the device layer, and/or back side ofone or more semiconductor regions within the device layer, and/orfront-side metallization revealed. Additional backside processing of anyof these revealed regions may then be performed during downstreamprocessing.

It is to be appreciated that the structures resulting from the aboveexemplary processing schemes may be used in a same or similar form forsubsequent processing operations to complete device fabrication, such asCMOS, PMOS and/or NMOS device fabrication. As an example of a completeddevice, FIG. 5 illustrate a cross-sectional view of a non-planarintegrated circuit structure as taken along a gate line, in accordancewith an embodiment of the present disclosure.

Referring to FIG. 5, a semiconductor structure or device 500 includes anon-planar active region (e.g., a fin structure including protruding finportion 504 and sub-fin region 505) within a trench isolation region506. In an embodiment, instead of a solid fin, the non-planar activeregion is separated into nanowires (such as nanowires 504A and 504B)above sub-fin region 505, as is represented by the dashed lines. Ineither case, for ease of description for non-planar integrated circuitstructure 500, a non-planar active region 504 is referenced below as aprotruding fin portion. In an embodiment, a fabrication process involvesuse of a process scheme that provides active regions 504 as adepopulated channel structure, examples of which are described above inassociation with FIG. 3. For example, in one embodiment, lower nanowires504B are oxidized nanowires, and upper nanowires 504A are activenanowires. In one embodiment, lower oxidized nanowires 504B include anoxidation catalyst layer thereon.

A gate line 508 is disposed over the protruding portions 504 of thenon-planar active region (including, if applicable, surroundingnanowires 504A and 504B), as well as over a portion of the trenchisolation region 506. As shown, gate line 508 includes a gate electrode550 and a gate dielectric layer 552. In one embodiment, gate line 508may also include a dielectric cap layer 554. A gate contact 514, andoverlying gate contact via 516 are also seen from this perspective,along with an overlying metal interconnect 560, all of which aredisposed in inter-layer dielectric stacks or layers 570. Also seen fromthe perspective of FIG. 5, the gate contact 514 is, in one embodiment,disposed over trench isolation region 506, but not over the non-planaractive regions.

In an embodiment, the semiconductor structure or device 500 is anon-planar device such as, but not limited to, a fin-FET device, atri-gate device, a nano-ribbon device, or a nano-wire device. In such anembodiment, a corresponding semiconducting channel region is composed ofor is formed in a three-dimensional body. In one such embodiment, thegate electrode stacks of gate lines 508 surround at least a top surfaceand a pair of sidewalls of the three-dimensional body.

As is also depicted in FIG. 5, in an embodiment, an interface 580 existsbetween a protruding fin portion 504 and sub-fin region 505. Theinterface 580 can be a transition region between a doped sub-fin region505 and a lightly or undoped upper fin portion 504. In one suchembodiment, each fin is approximately 10 nanometers wide or less, andsub-fin dopants are supplied from an adjacent solid state doping layerat the sub-fin location. In a particular such embodiment, each fin isless than 10 nanometers wide.

Although not depicted in FIG. 5, it is to be appreciated that source ordrain regions of or adjacent to the protruding fin portions 504 are oneither side of the gate line 508, i.e., into and out of the page. In oneembodiment, the source or drain regions are doped portions of originalmaterial of the protruding fin portions 504. In another embodiment, thematerial of the protruding fin portions 504 is removed and replaced withanother semiconductor material, e.g., by epitaxial deposition to formdiscrete epitaxial nubs or non-discrete epitaxial structures. In eitherembodiment, the source or drain regions may extend below the height ofdielectric layer of trench isolation region 506, i.e., into the sub-finregion 505. In accordance with an embodiment of the present disclosure,the more heavily doped sub-fin regions, i.e., the doped portions of thefins below interface 580, inhibits source to drain leakage through thisportion of the bulk semiconductor fins. In an embodiment, the source anddrain structures are N-type epitaxial source and drain structures, bothincluding phosphorous dopant impurity atoms. In accordance with one ormore embodiments of the present disclosure, the source and drain regionshave associated asymmetric source and drain contact structures, asdescribed above in association with FIG. 4J.

With reference again to FIG. 5, in an embodiment, fins 504/505 (and,possibly nanowires 504A and 504B) are composed of a crystalline silicon,silicon/germanium or germanium layer doped with a charge carrier, suchas but not limited to phosphorus, arsenic, boron or a combinationthereof. In one embodiment, the concentration of silicon atoms isgreater than 97%. In another embodiment, fins 504/505 are composed of agroup III-V material, such as, but not limited to, gallium nitride,gallium phosphide, gallium arsenide, indium phosphide, indiumantimonide, indium gallium arsenide, aluminum gallium arsenide, indiumgallium phosphide, or a combination thereof. Trench isolation region 506may be composed of a dielectric material such as, but not limited to,silicon dioxide, silicon oxy-nitride, silicon nitride, or carbon-dopedsilicon nitride.

Gate line 508 may be composed of a gate electrode stack which includes agate dielectric layer 552 and a gate electrode layer 550. In anembodiment, the gate electrode of the gate electrode stack is composedof a metal gate and the gate dielectric layer is composed of a high-Kmaterial. For example, in one embodiment, the gate dielectric layer iscomposed of a material such as, but not limited to, hafnium oxide,hafnium oxy-nitride, hafnium silicate, lanthanum oxide, zirconium oxide,zirconium silicate, tantalum oxide, barium strontium titanate, bariumtitanate, strontium titanate, yttrium oxide, aluminum oxide, leadscandium tantalum oxide, lead zinc niobate, or a combination thereof.Furthermore, a portion of gate dielectric layer may include a layer ofnative oxide formed from the top few layers of the protruding finportions 504. In an embodiment, the gate dielectric layer is composed ofa top high-k portion and a lower portion composed of an oxide of asemiconductor material. In one embodiment, the gate dielectric layer iscomposed of a top portion of hafnium oxide and a bottom portion ofsilicon dioxide or silicon oxy-nitride. In some implementations, aportion of the gate dielectric is a “U”-shaped structure that includes abottom portion substantially parallel to the surface of the substrateand two sidewall portions that are substantially perpendicular to thetop surface of the substrate.

In one embodiment, the gate electrode is composed of a metal layer suchas, but not limited to, metal nitrides, metal carbides, metal silicides,metal aluminides, hafnium, zirconium, titanium, tantalum, aluminum,ruthenium, palladium, platinum, cobalt, nickel or conductive metaloxides. In a specific embodiment, the gate electrode is composed of anon-workfunction-setting fill material formed above a metalworkfunction-setting layer. The gate electrode layer may consist of aP-type workfunction metal or an N-type workfunction metal, depending onwhether the transistor is to be a PMOS or an NMOS transistor. In someimplementations, the gate electrode layer may consist of a stack of twoor more metal layers, where one or more metal layers are workfunctionmetal layers and at least one metal layer is a conductive fill layer.For a PMOS transistor, metals that may be used for the gate electrodeinclude, but are not limited to, ruthenium, palladium, platinum, cobalt,nickel, and conductive metal oxides, e.g., ruthenium oxide. A P-typemetal layer will enable the formation of a PMOS gate electrode with aworkfunction that is between about 4.9 eV and about 5.2 eV. For an NMOStransistor, metals that may be used for the gate electrode include, butare not limited to, hafnium, zirconium, titanium, tantalum, aluminum,alloys of these metals, and carbides of these metals such as hafniumcarbide, zirconium carbide, titanium carbide, tantalum carbide, andaluminum carbide. An N-type metal layer will enable the formation of anNMOS gate electrode with a workfunction that is between about 3.9 eV andabout 4.2 eV. In some implementations, the gate electrode may consist ofa “U”-shaped structure that includes a bottom portion substantiallyparallel to the surface of the substrate and two sidewall portions thatare substantially perpendicular to the top surface of the substrate. Inanother implementation, at least one of the metal layers that form thegate electrode may simply be a planar layer that is substantiallyparallel to the top surface of the substrate and does not includesidewall portions substantially perpendicular to the top surface of thesubstrate. In further implementations of the disclosure, the gateelectrode may consist of a combination of U-shaped structures andplanar, non-U-shaped structures. For example, the gate electrode mayconsist of one or more U-shaped metal layers formed atop one or moreplanar, non-U-shaped layers.

Spacers associated with the gate electrode stacks may be composed of amaterial suitable to ultimately electrically isolate, or contribute tothe isolation of, a permanent gate structure from adjacent conductivecontacts, such as self-aligned contacts. For example, in one embodiment,the spacers are composed of a dielectric material such as, but notlimited to, silicon dioxide, silicon oxy-nitride, silicon nitride, orcarbon-doped silicon nitride.

Gate contact 514 and overlying gate contact via 516 may be composed of aconductive material. In an embodiment, one or more of the contacts orvias are composed of a metal species. The metal species may be a puremetal, such as tungsten, nickel, or cobalt, or may be an alloy such as ametal-metal alloy or a metal-semiconductor alloy (e.g., such as asilicide material).

In an embodiment (although not shown), a contact pattern which isessentially perfectly aligned to an existing gate pattern 508 is formedwhile eliminating the use of a lithographic step with exceedingly tightregistration budget. In an embodiment, the contact pattern is avertically asymmetric contact pattern, such as described in associationwith FIG. 4J. In other embodiments, all contacts are front sideconnected and are not asymmetric. In one such embodiment, theself-aligned approach enables the use of intrinsically highly selectivewet etching (e.g., versus conventionally implemented dry or plasmaetching) to generate contact openings. In an embodiment, a contactpattern is formed by utilizing an existing gate pattern in combinationwith a contact plug lithography operation. In one such embodiment, theapproach enables elimination of the need for an otherwise criticallithography operation to generate a contact pattern, as used inconventional approaches. In an embodiment, a trench contact grid is notseparately patterned, but is rather formed between poly (gate) lines.For example, in one such embodiment, a trench contact grid is formedsubsequent to gate grating patterning but prior to gate grating cuts.

In an embodiment, providing structure 500 involves fabrication of thegate stack structure 508 by a replacement gate process. In such ascheme, dummy gate material such as polysilicon or silicon nitridepillar material, may be removed and replaced with permanent gateelectrode material. In one such embodiment, a permanent gate dielectriclayer is also formed in this process, as opposed to being carriedthrough from earlier processing. In an embodiment, dummy gates areremoved by a dry etch or wet etch process. In one embodiment, dummygates are composed of polycrystalline silicon or amorphous silicon andare removed with a dry etch process including use of SF₆. In anotherembodiment, dummy gates are composed of polycrystalline silicon oramorphous silicon and are removed with a wet etch process including useof aqueous NH₄OH or tetramethylammonium hydroxide. In one embodiment,dummy gates are composed of silicon nitride and are removed with a wetetch including aqueous phosphoric acid.

Referring again to FIG. 5, the arrangement of semiconductor structure ordevice 500 places the gate contact over isolation regions. Such anarrangement may be viewed as inefficient use of layout space. In anotherembodiment, however, a semiconductor device has contact structures thatcontact portions of a gate electrode formed over an active region, e.g.,over a sub-fin 505, and in a same layer as a trench contact via.

It is to be appreciated that not all aspects of the processes describedabove need be practiced to fall within the spirit and scope ofembodiments of the present disclosure. Also, the processes describedherein may be used to fabricate one or a plurality of semiconductordevices. The semiconductor devices may be transistors or like devices.For example, in an embodiment, the semiconductor devices are ametal-oxide semiconductor (MOS) transistors for logic or memory, or arebipolar transistors. Also, in an embodiment, the semiconductor deviceshave a three-dimensional architecture, such as a nanowire device, ananoribbon device, a gate-all-around (GAA) device, a tri-gate device, anindependently accessed double gate device, or a FIN-FET. One or moreembodiments may be particularly useful for fabricating semiconductordevices at a sub-10 nanometer (10 nm) technology node.

In an embodiment, as used throughout the present description, interlayerdielectric (ILD) material is composed of or includes a layer of adielectric or insulating material. Examples of suitable dielectricmaterials include, but are not limited to, oxides of silicon (e.g.,silicon dioxide (SiO₂)), doped oxides of silicon, fluorinated oxides ofsilicon, carbon doped oxides of silicon, various low-k dielectricmaterials known in the arts, and combinations thereof. The interlayerdielectric material may be formed by conventional techniques, such as,for example, chemical vapor deposition (CVD), physical vapor deposition(PVD), or by other deposition methods.

In an embodiment, as is also used throughout the present description,metal lines or interconnect line material (and via material) is composedof one or more metal or other conductive structures. A common example isthe use of copper lines and structures that may or may not includebarrier layers between the copper and surrounding ILD material. As usedherein, the term metal includes alloys, stacks, and other combinationsof multiple metals. For example, the metal interconnect lines mayinclude barrier layers (e.g., layers including one or more of Ta, TaN,Ti or TiN), stacks of different metals or alloys, etc. Thus, theinterconnect lines may be a single material layer, or may be formed fromseveral layers, including conductive liner layers and fill layers. Anysuitable deposition process, such as electroplating, chemical vapordeposition or physical vapor deposition, may be used to forminterconnect lines. In an embodiment, the interconnect lines arecomposed of a conductive material such as, but not limited to, Cu, Al,Ti, Zr, Hf, V, Ru, Co, Ni, Pd, Pt, W, Ag, Au or alloys thereof. Theinterconnect lines are also sometimes referred to in the art as traces,wires, lines, metal, or simply interconnect.

In an embodiment, as is also used throughout the present description,hardmask materials, capping layers, or plugs are composed of dielectricmaterials different from the interlayer dielectric material. In oneembodiment, different hardmask, capping or plug materials may be used indifferent regions so as to provide different growth or etch selectivityto each other and to the underlying dielectric and metal layers. In someembodiments, a hardmask layer, capping or plug layer includes a layer ofa nitride of silicon (e.g., silicon nitride) or a layer of an oxide ofsilicon, or both, or a combination thereof. Other suitable materials mayinclude carbon-based materials. Other hardmask, capping or plug layersknown in the arts may be used depending upon the particularimplementation. The hardmask, capping or plug layers maybe formed byCVD, PVD, or by other deposition methods.

In an embodiment, as is also used throughout the present description,lithographic operations are performed using 193 nm immersion litho(i193), EUV and/or EBDW lithography, or the like. A positive tone or anegative tone resist may be used. In one embodiment, a lithographic maskis a trilayer mask composed of a topographic masking portion, ananti-reflective coating (ARC) layer, and a photoresist layer. In aparticular such embodiment, the topographic masking portion is a carbonhardmask (CHM) layer and the anti-reflective coating layer is a siliconARC layer.

In another aspect, one or more embodiments are directed to neighboringsemiconductor structures or devices separated by self-aligned gateendcap (SAGE) structures. Particular embodiments may be directed tointegration of multiple width (multi-Wsi) nanowires and nanoribbons in aSAGE architecture and separated by a SAGE wall. In an embodiment,nanowires/nanoribbons are integrated with multiple Wsi in a SAGEarchitecture portion of a front end process flow. Such a process flowmay involve integration of nanowires and nanoribbons of different Wsi toprovide robust functionality of next generation transistors with lowpower and high performance. Associated epitaxial source or drain regionsmay be embedded (e.g., portions of nanowires removed and then source ordrain (S/D) growth is performed) or formed by vertical merging (e.g.,epitaxial regions are formed around existing wires), as described ingreater detail below in association with FIGS. 9A-9E.

To provide further context, advantages of a self-aligned gate endcap(SAGE) architecture may include the enabling of higher layout densityand, in particular, scaling of diffusion to diffusion spacing. Toprovide illustrative comparison, FIG. 6 illustrates cross-sectionalviews taken through nanowires and fins for a non-endcap architecture(left-hand side (a)) versus a self-aligned gate endcap (SAGE)architecture (right-hand side (b)), in accordance with an embodiment ofthe present disclosure.

Referring to the left-hand side (a) of FIG. 6, an integrated circuitstructure 600 includes a substrate 602 having sub-fins 604 protrudingtherefrom within an isolation structure 608 laterally surrounding thesub-fins 604. Corresponding nanowires 649 and 605 are over the sub-fins604. In one embodiment, lower nanowires 649 are oxidized nanowires, andupper nanowires 605 are active nanowires. In one embodiment, loweroxidized nanowires 649 include an oxidation catalyst layer thereon. Agate structure may be formed over the integrated circuit structure 600to fabricate a device. However, breaks in such a gate structure may beaccommodated for by increasing the spacing between sub-fin 604/nanowire649/605 pairings.

By contrast, referring to the right-hand side (b) of FIG. 6, anintegrated circuit structure 650 includes a substrate 652 havingsub-fins 654 protruding therefrom within an isolation structure 658laterally surrounding the sub-fins 654. Corresponding nanowires 699 and655 are over the sub-fins 654. In one embodiment, lower nanowires 699are oxidized nanowires, and upper nanowires 655 are active nanowires. Inone embodiment, lower oxidized nanowires 699 include an oxidationcatalyst layer thereon. Isolating SAGE walls 660 are included within theisolation structure 658 and between adjacent sub-fin 654/nanowire699/655 pairings. The distance between an isolating SAGE wall 660 and anearest sub-fin 654/nanowire 699/655 pairings defines the gate endcapspacing 662. A gate structure may be formed over the integrated circuitstructure 650, between insolating SAGE walls to fabricate a device.Breaks in such a gate structure are imposed by the isolating SAGE walls.Since the isolating SAGE walls 660 are self-aligned, restrictions fromconventional approaches can be minimized to enable more aggressivediffusion to diffusion spacing. Furthermore, since gate structuresinclude breaks at all locations, individual gate structure portions maybe layer connected by local interconnects formed over the isolating SAGEwalls 660. In an embodiment, as depicted, the SAGE walls 660 eachinclude a lower dielectric portion and a dielectric cap on the lowerdielectric portion, as is depicted.

In accordance with an embodiment of the present disclosure, afabrication process for structures associated with FIG. 6 involves useof a process scheme that provides a gate-all-around integrated circuitstructure having a depopulated channel structure, examples of which aredescribed above in association with FIG. 3.

A self-aligned gate endcap (SAGE) processing scheme involves theformation of gate/trench contact endcaps self-aligned to fins withoutrequiring an extra length to account for mask mis-registration. Thus,embodiments may be implemented to enable shrinking of transistor layoutarea. Embodiments described herein may involve the fabrication of gateendcap isolation structures, which may also be referred to as gatewalls, isolation gate walls or self-aligned gate endcap (SAGE) walls.

In an exemplary processing scheme for structures having SAGE wallsseparating neighboring devices, FIG. 7 illustrate cross-sectional viewsrepresenting various operations in a method of fabricating aself-aligned gate endcap (SAGE) structure with gate-all-around devices,in accordance with an embodiment of the present disclosure.

Referring to part (a) of FIG. 7, a starting structure includes ananowire patterning stack 704 above a substrate 702. A lithographicpatterning stack 706 is formed above the nanowire patterning stack 704.The nanowire patterning stack 704 includes alternating silicon germaniumlayers 710 and silicon layers 712. A protective mask 714 is between thenanowire patterning stack 704 and the lithographic patterning stack 706.In one embodiment, the lithographic patterning stack 706 is trilayermask composed of a topographic masking portion 720, an anti-reflectivecoating (ARC) layer 722, and a photoresist layer 724. In a particularsuch embodiment, the topographic masking portion 720 is a carbonhardmask (CHM) layer and the anti-reflective coating layer 722 is asilicon ARC layer.

Referring to part (b) of FIG. 7, the stack of part (a) islithographically patterned and then etched to provide an etchedstructure including a patterned substrate 702 and trenches 730.

Referring to part (c) of FIG. 7, the structure of part (b) has anisolation layer 740 and a SAGE material 742 formed in trenches 730. Thestructure is then planarized to leave patterned topographic maskinglayer 720′ as an exposed upper layer.

Referring to part (d) of FIG. 7, the isolation layer 740 is recessedbelow an upper surface of the patterned substrate 702, e.g., to define aprotruding fin portion and to provide a trench isolation structure 741beneath SAGE walls 742.

Referring to part (e) of FIG. 7, the silicon germanium layers 710 areremoved at least in the channel region to release silicon nanowires 712Aand 712B.

In accordance with an embodiment of the present disclosure, afabrication process for structures associated with FIG. 7 involves useof a process scheme that provides a gate-all-around integrated circuitstructure having a depopulated channel structure, examples of which aredescribed above in association with FIG. 3. For example, referring topart (e) of FIG. 7, in an embodiment, nanowire 712B and nanoribbon 712Aare an active nanowire and nanoribbon, respectively. In one suchembodiment, nanowire 799B is an oxidized nanowire, and nanoribbon 799Ais an oxidized nanoribbon, as is depicted. In another such embodiment,nanowire 799B is an oxidized nanowire, and nanoribbon 799A is an activenanoribbon. In another such embodiment, nanowire 799B is an activenanowire, and nanoribbon 799A is an oxidized nanoribbon. In any case, inan embodiment, an oxidized nanowire or an oxidized nanoribbon includesan oxidation catalyst layer thereon.

Subsequent to the formation of the structure of part (e) of FIG. 7, oneor more gate stacks may be formed around the active and oxidizednanowires and/or nanoribbons, over protruding fins of substrate 702, andbetween SAGE walls 742. In one embodiment, prior to formation of thegate stacks, the remaining portion of protective mask 714 is removed. Inanother embodiment, the remaining portion of protective mask 714 isretained as an insulating fin hat as an artifact of the processingscheme.

Referring again to part (e) of FIG. 7, it is to be appreciated that achannel view is depicted, with source or drain regions being locatinginto and out of the page. In an embodiment, the channel region includingnanowires 712B has a width less than the channel region includingnanowires 712A. Thus, in an embodiment, an integrated circuit structureincludes multiple width (multi-Wsi) nanowires. Although structures of712B and 712A may be differentiated as nanowires and nanoribbons,respectively, both such structures are typically referred to herein asnanowires. It is also to be appreciated that reference to or depictionof a fin/nanowire pair throughout may refer to a structure including afin and one or more overlying nanowires (e.g., two overlying nanowiresare shown in FIG. 7), where one or more bottom wires are oxidized fordepopulation.

With reference again to part (e) of FIG. 7 and the subsequentdescription, in accordance with an embodiment of the present disclosure,an integrated circuit structure includes a first vertical arrangement ofnanowires and a second vertical arrangement of nanowires above asubstrate. The first vertical arrangement of nanowires has a greaternumber of active nanowires than the second vertical arrangement ofnanowires. The first and second vertical arrangements of nanowires haveco-planar uppermost nanowires and co-planar bottommost nanowires. Thesecond vertical arrangement of nanowires has an oxidized bottommostnanowire. A first gate stack is over the first vertical arrangement ofnanowires. A second gate stack is over the second vertical arrangementof nanowires and around the oxidized bottommost nanowire.

In an embodiment, the nanowires of the first vertical arrangement ofnanowires have a horizontal width the same as a horizontal width of thenanowires of the second vertical arrangement of nanowires. In anotherembodiment, the nanowires of the first vertical arrangement of nanowireshave a horizontal width greater than a horizontal width of the nanowiresof the second vertical arrangement of nanowires. In another embodiment,the nanowires of the first vertical arrangement of nanowires have ahorizontal width less than a horizontal width of the nanowires of thesecond vertical arrangement of nanowires.

To highlight an exemplary integrated circuit structure having threevertically arranged nanowires, FIG. 8A illustrates a three-dimensionalcross-sectional view of a nanowire-based integrated circuit structure,in accordance with an embodiment of the present disclosure. FIG. 8Billustrates a cross-sectional source or drain view of the nanowire-basedintegrated circuit structure of FIG. 8A, as taken along the a-a′ axis.FIG. 8C illustrates a cross-sectional channel view of the nanowire-basedintegrated circuit structure of FIG. 8A, as taken along the b-b′ axis.

Referring to FIG. 8A, an integrated circuit structure 800 includes oneor more vertically stacked nanowires (804 set) above a substrate 802. Anoptional fin between the bottommost nanowire and the substrate 802 isnot depicted for the sake of emphasizing the nanowire portion forillustrative purposes. Embodiments herein are targeted at both singlewire devices and multiple wire devices. As an example, a threenanowire-based devices having nanowires 804A, 804B and 804C is shown forillustrative purposes. For convenience of description, nanowire 804A isused as an example where description is focused on one of the nanowires.It is to be appreciated that where attributes of one nanowire aredescribed, embodiments based on a plurality of nanowires may have thesame or essentially the same attributes for each of the nanowires.

Each of the nanowires 804 includes a channel region 806 in the nanowire.The channel region 806 has a length (L). Referring to FIG. 8C, thechannel region also has a perimeter (Pc) orthogonal to the length (L).Referring to both FIGS. 8A and 8C, a gate electrode stack 808 surroundsthe entire perimeter (Pc) of each of the channel regions 806. The gateelectrode stack 808 includes a gate electrode along with a gatedielectric layer between the channel region 806 and the gate electrode(not shown). In an embodiment, the channel region is discrete in that itis completely surrounded by the gate electrode stack 808 without anyintervening material such as underlying substrate material or overlyingchannel fabrication materials. Accordingly, in embodiments having aplurality of nanowires 804, the channel regions 806 of the nanowires arealso discrete relative to one another.

In accordance with an embodiment of the present disclosure, afabrication process for structures associated with FIGS. 8A-8C involvesuse of a process scheme that provides a gate-all-around integratedcircuit structure having a depopulated channel structure 806, examplesof which are described above in association with FIG. 3. For example, inone embodiment, nanowire 804A is an oxidized nanowire. In anotherembodiment, both nanowire 804A and nanowire 804B are oxidized nanowires.In one embodiment, an oxidized nanowire includes an oxidation catalystlayer thereon.

Referring to both FIGS. 8A and 8B, integrated circuit structure 800includes a pair of non-discrete source or drain regions 810/812. Thepair of non-discrete source or drain regions 810/812 is on either sideof the channel regions 806 of the plurality of vertically stackednanowires 804. Furthermore, the pair of non-discrete source or drainregions 810/812 is adjoining for the channel regions 806 of theplurality of vertically stacked nanowires 804. In one such embodiment,not depicted, the pair of non-discrete source or drain regions 810/812is directly vertically adjoining for the channel regions 806 in thatepitaxial growth is on and between nanowire portions extending beyondthe channel regions 806, where nanowire ends are shown within the sourceor drain structures. In another embodiment, as depicted in FIG. 8A, thepair of non-discrete source or drain regions 810/812 is indirectlyvertically adjoining for the channel regions 806 in that they are formedat the ends of the nanowires and not between the nanowires.

In an embodiment, as depicted, the source or drain regions 810/812 arenon-discrete in that there are not individual and discrete source ordrain regions for each channel region 806 of a nanowire 804.Accordingly, in embodiments having a plurality of nanowires 804, thesource or drain regions 810/812 of the nanowires are global or unifiedsource or drain regions as opposed to discrete for each nanowire. In oneembodiment, from a cross-sectional perspective orthogonal to the lengthof the discrete channel regions 806, each of the pair of non-discretesource or drain regions 810/812 is approximately rectangular in shapewith a bottom tapered portion and a top vertex portion, as depicted inFIG. 8B. In other embodiments, however, the source or drain regions810/812 of the nanowires are relatively larger yet discretenon-vertically merged epitaxial structures such as nubs described inassociation with FIGS. 4F-4J.

In accordance with an embodiment of the present disclosure, and asdepicted in FIGS. 8A and 8B, integrated circuit structure 800 furtherincludes a pair of contacts 814, each contact 814 on one of the pair ofnon-discrete source or drain regions 810/812. In one such embodiment, ina vertical sense, each contact 814 completely surrounds the respectivenon-discrete source or drain region 810/812. In another aspect, theentire perimeter of the non-discrete source or drain regions 810/812 maynot be accessible for contact with contacts 814, and the contact 814thus only partially surrounds the non-discrete source or drain regions810/812, as depicted in FIG. 8B. In a contrasting embodiment, notdepicted, the entire perimeter of the non-discrete source or drainregions 810/812, as taken along the a-a′ axis, is surrounded by thecontacts 814. In accordance with an embodiment of the presentdisclosure, although not depicted, the pair of contacts 814 is anasymmetric pair of contacts, as described in association with FIG. 4J.

Referring to FIGS. 8B and 8C, the non-discrete source or drain regions810/812 are global in the sense that a single unified feature is used asa source or drain region for a plurality (in this case, 3) of nanowires804 and, more particularly, for more than one discrete channel region806. In an embodiment, the pair of non-discrete source or drain regions810/812 is composed of a semiconductor material different than thesemiconductor material of the discrete channel regions 806, e.g., thepair of non-discrete source or drain regions 810/812 is composed of asilicon germanium while the discrete channel regions 806 are composed ofsilicon. In another embodiment, the pair of non-discrete source or drainregions 810/812 is composed of a semiconductor material the same oressentially the same as the semiconductor material of the discretechannel regions 806, e.g., both the pair of non-discrete source or drainregions 810/812 and the discrete channel regions 806 are composed ofsilicon.

Referring again to FIG. 8A, in an embodiment, integrated circuitstructure 800 further includes a pair of spacers 816. As is depicted,outer portions of the pair of spacers 816 may overlap portions of thenon-discrete source or drain regions 810/812, providing for “embedded”portions of the non-discrete source or drain regions 810/812 beneath thepair of spacers 816. As is also depicted, the embedded portions of thenon-discrete source or drain regions 810/812 may not extend beneath theentirety of the pair of spacers 816.

Substrate 802 may be composed of a material suitable for integratedcircuit structure fabrication. In one embodiment, substrate 802 includesa lower bulk substrate composed of a single crystal of a material whichmay include, but is not limited to, silicon, germanium,silicon-germanium or a III-V compound semiconductor material. An upperinsulator layer composed of a material which may include, but is notlimited to, silicon dioxide, silicon nitride or silicon oxy-nitride ison the lower bulk substrate. Thus, the structure 800 may be fabricatedfrom a starting semiconductor-on-insulator substrate. Alternatively, thestructure 800 is formed directly from a bulk substrate and localoxidation is used to form electrically insulative portions in place ofthe above described upper insulator layer. In another alternativeembodiment, the structure 800 is formed directly from a bulk substrateand doping is used to form electrically isolated active regions, such asnanowires, thereon. In one such embodiment, the first nanowire (i.e.,proximate the substrate) is in the form of an omega-FET type structure.

In an embodiment, the nanowires 804 may be sized as wires or ribbons, asdescribed below, and may have squared-off or rounder corners. In anembodiment, the nanowires 804 are composed of a material such as, butnot limited to, silicon, germanium, or a combination thereof. In onesuch embodiment, the nanowires are single-crystalline. For example, fora silicon nanowire 804, a single-crystalline nanowire may be based froma (100) global orientation, e.g., with a <100> plane in the z-direction.As described below, other orientations may also be considered. In anembodiment, the dimensions of the nanowires 804, from a cross-sectionalperspective, are on the nano-scale. For example, in a specificembodiment, the smallest dimension of the nanowires 804 is less thanapproximately 20 nanometers. In an embodiment, the nanowires 804 arecomposed of a strained material, particularly in the channel regions806.

Referring to FIG. 8C, in an embodiment, each of the channel regions 806has a width (Wc) and a height (Hc), the width (Wc) approximately thesame as the height (Hc). That is, in both cases, the channel regions 806are square-like or, if corner-rounded, circle-like in cross-sectionprofile. In another aspect, the width and height of the channel regionneed not be the same, such as the case for nanoribbbons as describedthroughout.

In another aspect, methods of fabricating a nanowire portion of afin/nanowire integrated circuit structure are provided. For example,FIGS. 9A-9E illustrate three-dimensional cross-sectional viewsrepresenting various operations in a method of fabricating a nanowireportion of a fin/nanowire structure, in accordance with an embodiment ofthe present disclosure.

A method of fabricating a nanowire integrated circuit structure mayinclude forming a nanowire above a substrate. In a specific exampleshowing the formation of two silicon nanowires, FIG. 9A illustrates asubstrate 902 (e.g., composed of a bulk substrate silicon substrate 902Awith an insulating silicon dioxide layer 902B there on) having a siliconlayer 904/silicon germanium layer 906/silicon layer 908 stack thereon.It is to be understood that, in another embodiment, a silicon germaniumlayer/silicon layer/silicon germanium layer stack may be used toultimately form two silicon germanium nanowires.

Referring to FIG. 9B, a portion of the silicon layer 904/silicongermanium layer 906/silicon layer 908 stack as well as a top portion ofthe silicon dioxide layer 902B is patterned into a fin-type structure910, e.g., with a mask and plasma etch process. It is to be appreciatedthat, for illustrative purposes, the etch for FIG. 9B is shown asforming two silicon nanowire precursor portions. Although the etch isshown for ease of illustration as ending within a bottom isolationlayer, more complex stacks are contemplated within the context ofembodiments of the present disclosure. For example, the process may beapplied to a nanowire/fin stack as described in association with FIG. 7.

The method may also include forming a channel region in the nanowire,the channel region having a length and a perimeter orthogonal to thelength. In a specific example showing the formation of three gatestructures over the two silicon nanowires, FIG. 9C illustrates thefin-type structure 910 with three sacrificial gates 912A, 912B, and 912Cthereon. In one such embodiment, the three sacrificial gates 912A, 912B,and 912C are composed of a sacrificial gate oxide layer 914 and asacrificial polysilicon gate layer 916 which are blanket deposited andpatterned with a plasma etch process.

Following patterning to form the three sacrificial gates 912A, 912B, and912C, spacers may be formed on the sidewalls of the three sacrificialgates 912A, 912B, and 912C, doping may be performed (e.g., tip and/orsource and drain type doping), and an interlayer dielectric layer may beformed to cover the three sacrificial gates 912A, 912B, and 912C. Theinterlayer dielectric layer may be polished to expose the threesacrificial gates 912A, 912B, and 912C for a replacement gate, orgate-last, process.

Referring to FIG. 9D, the three sacrificial gates 912A, 912B, and 912Care removed, leaving spacers 918 and a portion of the interlayerdielectric layer 920 remaining. Additionally, the portions of thesilicon germanium layer 906 and the portion of the insulating silicondioxide layer 902B of the fin structure 910 are removed in the regionsoriginally covered by the three sacrificial gates 912A, 912B, and 912C.Discrete portions of the silicon layers 904 and 908 thus remain, asdepicted in FIG. 9D.

The discrete portions of the silicon layers 904 and 908 shown in FIG. 9Dwill, in one embodiment, ultimately become channel regions in ananowire-based device. Thus, at the process stage depicted in FIG. 9D,channel engineering or tuning may be performed. For example, in oneembodiment, the discrete portions of the silicon layers 904 and 908shown in FIG. 9D are thinned using oxidation and etch processes. Such anetch process may be performed at the same time the wires are separatedby etching the silicon germanium layer 906. Accordingly, the initialwires formed from silicon layers 904 and 908 begin thicker and arethinned to a size suitable for a channel region in a nanowire device,independent from the sizing of the source and drain regions of thedevice. Thus, in an embodiment, forming the channel region includesremoving a portion of the nanowire, and the resulting perimeters of thesource and drain regions (described below) are greater than theperimeter of the resulting channel region.

In accordance with an embodiment of the present disclosure, followingremoval of the three sacrificial gates 912A, 912B, and 912C and removalof the portions of the silicon germanium layer 906 and the portion ofthe insulating silicon dioxide layer 902B of the fin structure 910 fromthe regions originally covered by the three sacrificial gates 912A,912B, and 912C, a fabrication process is performed that provides agate-all-around integrated circuit structure having a depopulatedchannel structure, examples of which are described above in associationwith FIG. 3. For example, in one embodiment, nanowire 904 is an oxidizednanowire in the channel region. In one embodiment, an oxidized nanowireincludes an oxidation catalyst layer thereon.

The method may also include forming a gate electrode stack surroundingthe entire perimeter of the channel region. In the specific exampleshowing the formation of three gate structures over the two siliconnanowires, FIG. 9E illustrates the structure following deposition of agate dielectric layer 922 (such as a high-k gate dielectric layer) and agate electrode layer 924 (such as a metal gate electrode layer), andsubsequent polishing, in between the spacers 918. That is, gatestructures are formed in the trenches 921 of FIG. 9D. Additionally, FIG.9E depicts the result of the subsequent removal of the interlayerdielectric layer 920 after formation of the permanent gate stack. Theportions of the silicon germanium layer 906 and the portion of theinsulating silicon dioxide layer 902B of the fin structure 910 are alsoremoved in the regions originally covered by the portion of theinterlayer dielectric layer 920 depicted in FIG. 9D. Discrete portionsof the silicon layers 904 and 908 thus remain, as depicted in FIG. 9E.

The method may also include forming a pair of source and drain regionsin the nanowire, on either side of the channel region, each of thesource and drain regions having a perimeter orthogonal to the length ofthe channel region. Specifically, the discrete portions of the siliconlayers 904 and 908 shown in FIG. 9E will, in one embodiment, ultimatelybecome at least a portion of the source and drain regions in ananowire-based device. In one such embodiment, epitaxial source or drainstructures are formed by merging epitaxial material around existingnanowires 904 and 908. In another embodiment, epitaxial source or drainstructures are embedded, e.g., portions of nanowires 904 and 908 areremoved and then source or drain (S/D) growth is performed. In thelatter case, in accordance with an embodiment of the present disclosure,such epitaxial source or drain structures may be non-discrete, asexemplified in association with FIGS. 8A and 8B, or may be discrete, asexemplified in association with FIG. 4J. In either case, in oneembodiment, source or drain structures are N-type epitaxial source ordrain structures, both including phosphorous dopant impurity atoms.

The method may subsequently include forming a pair of contacts, a firstof the pair of contacts completely or nearly completely surrounding theperimeter of the source region, and a second of the pair of contactscompletely or nearly completely surrounding the perimeter of the drainregion. In an embodiment, the pair of contacts is an asymmetric pair ofsource and drain contact structures, such as described in associationwith FIG. 4J. In other embodiments, the pair of contacts is a symmetricpair of source and drain contact structures. Specifically, contacts areformed in the trenches 925 of FIG. 9E following epitaxial growth. One ofthe trenches may first be recessed further than the other of thetrenches. In an embodiment, the contacts are formed from a metallicspecies. In one such embodiment, the metallic species is formed byconformally depositing a contact metal and then filling any remainingtrench volume. The conformal aspect of the deposition may be performedby using chemical vapor deposition (CVD), atomic layer deposition (ALD),or metal reflow.

In an embodiment, as described throughout, an integrated circuitstructure includes non-planar devices such as, but not limited to, afinFET or a tri-gate device with corresponding one or more overlyingnanowire structures. In such an embodiment, a correspondingsemiconducting channel region is composed of or is formed in athree-dimensional body with one or more discrete nanowire channelportions overlying the three-dimensional body. In one such embodiment,the gate structures surround at least a top surface and a pair ofsidewalls of the three-dimensional body, and further surrounds each ofthe one or more discrete nanowire channel portions.

In an embodiment, as described throughout, a substrate may be composedof a semiconductor material that can withstand a manufacturing processand in which charge can migrate. In an embodiment, the substrate is abulk substrate composed of a crystalline silicon, silicon/germanium orgermanium layer doped with a charge carrier, such as but not limited tophosphorus, arsenic, boron or a combination thereof, to form an activeregion. In one embodiment, the concentration of silicon atoms in a bulksubstrate is greater than 97%. In another embodiment, a bulk substrateis composed of an epitaxial layer grown atop a distinct crystallinesubstrate, e.g. a silicon epitaxial layer grown atop a boron-doped bulksilicon mono-crystalline substrate. A bulk substrate may alternativelybe composed of a group III-V material. In an embodiment, a bulksubstrate is composed of a III-V material such as, but not limited to,gallium nitride, gallium phosphide, gallium arsenide, indium phosphide,indium antimonide, indium gallium arsenide, aluminum gallium arsenide,indium gallium phosphide, or a combination thereof. In one embodiment, abulk substrate is composed of a III-V material and the charge-carrierdopant impurity atoms are ones such as, but not limited to, carbon,silicon, germanium, oxygen, sulfur, selenium or tellurium.

In an embodiment, as described throughout, a trench isolation layer maybe composed of a material suitable to ultimately electrically isolate,or contribute to the isolation of, portions of a permanent gatestructure from an underlying bulk substrate or isolate active regionsformed within an underlying bulk substrate, such as isolating fin activeregions. For example, in one embodiment, a trench isolation layer iscomposed of a dielectric material such as, but not limited to, silicondioxide, silicon oxy-nitride, silicon nitride, or carbon-doped siliconnitride.

In an embodiment, as described throughout, self-aligned gate endcapisolation structures may be composed of a material or materials suitableto ultimately electrically isolate, or contribute to the isolation of,portions of permanent gate structures from one another. Exemplarymaterials or material combinations include a single material structuresuch as silicon dioxide, silicon oxy-nitride, silicon nitride, orcarbon-doped silicon nitride. Other exemplary materials or materialcombinations include a multi-layer stack having lower portion silicondioxide, silicon oxy-nitride, silicon nitride, or carbon-doped siliconnitride and an upper portion higher dielectric constant material such ashafnium oxide.

Embodiments disclosed herein may be used to manufacture a wide varietyof different types of integrated circuits and/or microelectronicdevices. Examples of such integrated circuits include, but are notlimited to, processors, chipset components, graphics processors, digitalsignal processors, micro-controllers, and the like. In otherembodiments, semiconductor memory may be manufactured. Moreover, theintegrated circuits or other microelectronic devices may be used in awide variety of electronic devices known in the arts. For example, incomputer systems (e.g., desktop, laptop, server), cellular phones,personal electronics, etc. The integrated circuits may be coupled with abus and other components in the systems. For example, a processor may becoupled by one or more buses to a memory, a chipset, etc. Each of theprocessor, the memory, and the chipset, may potentially be manufacturedusing the approaches disclosed herein.

FIG. 10 illustrates a computing device 1000 in accordance with oneimplementation of an embodiment of the present disclosure. The computingdevice 1000 houses a board 1002. The board 1002 may include a number ofcomponents, including but not limited to a processor 1004 and at leastone communication chip 1006. The processor 1004 is physically andelectrically coupled to the board 1002. In some implementations the atleast one communication chip 1006 is also physically and electricallycoupled to the board 1002. In further implementations, the communicationchip 1006 is part of the processor 1004.

Depending on its applications, computing device 1000 may include othercomponents that may or may not be physically and electrically coupled tothe board 1002. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 1006 enables wireless communications for thetransfer of data to and from the computing device 1000. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 1006 may implementany of a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 1000 may include a plurality ofcommunication chips 1006. For instance, a first communication chip 1006may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 1006 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 1004 of the computing device 1000 includes an integratedcircuit die packaged within the processor 1004. The integrated circuitdie of the processor 1004 may include one or more structures, such asgate-all-around integrated circuit structures having depopulated channelstructures built in accordance with implementations of embodiments ofthe present disclosure. The term “processor” may refer to any device orportion of a device that processes electronic data from registers and/ormemory to transform that electronic data into other electronic data thatmay be stored in registers and/or memory.

The communication chip 1006 also includes an integrated circuit diepackaged within the communication chip 1006. The integrated circuit dieof the communication chip 1006 may include one or more structures, suchas gate-all-around integrated circuit structures having depopulatedchannel structures built in accordance with implementations ofembodiments of the present disclosure.

In further implementations, another component housed within thecomputing device 1000 may contain an integrated circuit die thatincludes one or structures, such as gate-all-around integrated circuitstructures having depopulated channel structures built in accordancewith implementations of embodiments of the present disclosure.

In various implementations, the computing device 1000 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 1000 may be any other electronic device that processes data.

FIG. 11 illustrates an interposer 1100 that includes one or moreembodiments of the present disclosure. The interposer 1100 is anintervening substrate used to bridge a first substrate 1102 to a secondsubstrate 1104. The first substrate 1102 may be, for instance, anintegrated circuit die. The second substrate 1104 may be, for instance,a memory module, a computer motherboard, or another integrated circuitdie. Generally, the purpose of an interposer 1100 is to spread aconnection to a wider pitch or to reroute a connection to a differentconnection. For example, an interposer 1100 may couple an integratedcircuit die to a ball grid array (BGA) 1106 that can subsequently becoupled to the second substrate 1104. In some embodiments, the first andsecond substrates 1102/1104 are attached to opposing sides of theinterposer 1100. In other embodiments, the first and second substrates1102/1104 are attached to the same side of the interposer 1100. And infurther embodiments, three or more substrates are interconnected by wayof the interposer 1100.

The interposer 1100 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In further implementations, the interposermay be formed of alternate rigid or flexible materials that may includethe same materials described above for use in a semiconductor substrate,such as silicon, germanium, and other group III-V and group IVmaterials.

The interposer may include metal interconnects 1108 and vias 1110,including but not limited to through-silicon vias (TSVs) 1112. Theinterposer 1100 may further include embedded devices 1114, includingboth passive and active devices. Such devices include, but are notlimited to, capacitors, decoupling capacitors, resistors, inductors,fuses, diodes, transformers, sensors, and electrostatic discharge (ESD)devices. More complex devices such as radio-frequency (RF) devices,power amplifiers, power management devices, antennas, arrays, sensors,and MEMS devices may also be formed on the interposer 1100. Inaccordance with embodiments of the disclosure, apparatuses or processesdisclosed herein may be used in the fabrication of interposer 1100 or inthe fabrication of components included in the interposer 1100.

Thus, embodiments of the present disclosure include gate-all-aroundintegrated circuit structures having depopulated channel structures, andmethods of fabricating gate-all-around integrated circuit structureshaving depopulated channel structures.

The above description of illustrated implementations of embodiments ofthe disclosure, including what is described in the Abstract, is notintended to be exhaustive or to limit the disclosure to the preciseforms disclosed. While specific implementations of, and examples for,the disclosure are described herein for illustrative purposes, variousequivalent modifications are possible within the scope of thedisclosure, as those skilled in the relevant art will recognize.

These modifications may be made to the disclosure in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the disclosure to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of thedisclosure is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

Example Embodiment 1

An integrated circuit structure includes a vertical arrangement ofnanowires above a substrate. The vertical arrangement of nanowires hasone or more active nanowires above one or more oxidized nanowires. Agate stack is over the vertical arrangement of nanowires and around theone or more oxidized nanowires.

Example Embodiment 2

The integrated circuit structure of example embodiment 1, wherein theone or more oxidized nanowires have an oxidation catalyst layer thereon.

Example Embodiment 3

The integrated circuit structure of example embodiment 2, wherein theoxidation catalyst layer includes aluminum oxide.

Example Embodiment 4

The integrated circuit structure of example embodiment 1, 2 or 3,further including epitaxial source or drain structures at ends of thevertical arrangement of nanowires.

Example Embodiment 5

The integrated circuit structure of example embodiment 4, wherein theepitaxial source or drain structures are discrete epitaxial source ordrain structures.

Example Embodiment 6

The integrated circuit structure of example embodiment 4, wherein theepitaxial source or drain structures are non-discrete epitaxial sourceor drain structures.

Example Embodiment 7

The integrated circuit structure of example embodiment 4, 5 or 6,wherein the gate stack has dielectric sidewall spacers, and theepitaxial source or drain structures are embedded epitaxial source ordrain structures extending beneath the dielectric sidewall spacers ofthe gate stack.

Example Embodiment 8

The integrated circuit structure of example embodiment 4, 5, 6 or 7,further including a pair of conductive contact structures coupled to theepitaxial source or drain structures.

Example Embodiment 9

The integrated circuit structure of example embodiment 8, wherein thepair of conductive contact structures is an asymmetric pair ofconductive contact structures.

Example Embodiment 10

The integrated circuit structure of example embodiment 1, 2, 3, 4, 5, 6,7, 8 or 9, wherein the vertical arrangement of nanowires is over a fin.

Example Embodiment 11

The integrated circuit structure of example embodiment 1, 2, 3, 4, 5, 6,7, 8, 9 or 10, wherein the gate stack includes a high-k gate dielectriclayer and a metal gate electrode.

Example Embodiment 12

An integrated circuit structure includes a first vertical arrangement ofnanowires and a second vertical arrangement of nanowires above asubstrate. The first vertical arrangement of nanowires has a greaternumber of active nanowires than the second vertical arrangement ofnanowires. The first and second vertical arrangements of nanowires haveco-planar uppermost nanowires and co-planar bottommost nanowires. Thesecond vertical arrangement of nanowires has an oxidized bottommostnanowire. A first gate stack is over the first vertical arrangement ofnanowires. A second gate stack is over the second vertical arrangementof nanowires and around the oxidized bottommost nanowire.

Example Embodiment 13

The integrated circuit structure of example embodiment 12, wherein thenanowires of the first vertical arrangement of nanowires have ahorizontal width the same as a horizontal width of the nanowires of thesecond vertical arrangement of nanowires.

Example Embodiment 14

The integrated circuit structure of example embodiment 12, wherein thenanowires of the first vertical arrangement of nanowires have ahorizontal width greater than a horizontal width of the nanowires of thesecond vertical arrangement of nanowires.

Example Embodiment 15

The integrated circuit structure of example embodiment 12, wherein thenanowires of the first vertical arrangement of nanowires have ahorizontal width less than a horizontal width of the nanowires of thesecond vertical arrangement of nanowires.

Example Embodiment 16

The integrated circuit structure of example embodiment 12, 13, 14 or 15,further including first epitaxial source or drain structures at ends ofthe first vertical arrangement of nanowires, and second epitaxial sourceor drain structures at ends of the second vertical arrangement ofnanowires.

Example Embodiment 17

The integrated circuit structure of example embodiment 16, wherein thefirst and second epitaxial source or drain structures are discrete firstand second epitaxial source or drain structures.

Example Embodiment 18

The integrated circuit structure of example embodiment 16, wherein thefirst and second epitaxial source or drain structures are non-discretefirst and second epitaxial source or drain structures.

Example Embodiment 19

The integrated circuit structure of example embodiment 16, 17 or 18,wherein the first gate stack has dielectric sidewall spacers, and thefirst epitaxial source or drain structures are first embedded epitaxialsource or drain structures extending beneath the dielectric sidewallsspacers of the first gate stack, and wherein the second gate stack hasdielectric sidewall spacers, and the second epitaxial source or drainstructures are second embedded epitaxial source or drain structuresextending beneath the dielectric sidewalls spacers of the second gatestack.

Example Embodiment 20

The integrated circuit structure of example embodiment 16, 17, 18 or 19,further including a first pair of conductive contact structures coupledto the first epitaxial source or drain structures, and a second pair ofconductive contact structures coupled to the second epitaxial source ordrain structures.

Example Embodiment 21

The integrated circuit structure of example embodiment 12, 13, 14, 15,16, 17, 18, 19 or 20, wherein the first vertical arrangement ofnanowires is over a first fin, and the second vertical arrangement ofnanowires is over a second fin.

Example Embodiment 22

The integrated circuit structure of example embodiment 12, 13, 14, 15,16, 17, 18, 19, 20 or 21, further including a gate endcap isolationstructure between and in contact with the first gate stack and thesecond gate stack.

Example Embodiment 23

The integrated circuit structure of example embodiment 12, 13, 14, 15,16, 17, 18, 19, 20, 21 or 22, wherein the first and second gate stackseach include a high-k gate dielectric layer and a metal gate electrode.

Example Embodiment 24

A method of fabricating an integrated circuit structure includes forminga vertical arrangement of active nanowires above a substrate, oxidizingone or more bottommost nanowires of the vertical arrangement of activenanowires but not one or more uppermost nanowires of the verticalarrangement of active nanowires, and forming a gate stack around theoxidized one or more bottommost nanowires and around the one or moreuppermost nanowires.

Example Embodiment 25

The method of embodiment 24, wherein oxidizing the one or morebottommost nanowires of the vertical arrangement of active nanowiresincludes first forming an oxidation catalyst layer on the one or morebottommost nanowires.

What is claimed is:
 1. An integrated circuit structure, comprising: avertical arrangement of nanowires above a substrate, the verticalarrangement of nanowires having one or more active nanowires above oneor more oxidized nanowires; a gate stack over the vertical arrangementof nanowires and around the one or more oxidized nanowires.
 2. Theintegrated circuit structure of claim 1, wherein the one or moreoxidized nanowires have an oxidation catalyst layer thereon.
 3. Theintegrated circuit structure of claim 2, wherein the oxidation catalystlayer comprises aluminum oxide.
 4. The integrated circuit structure ofclaim 1, further comprising: epitaxial source or drain structures atends of the vertical arrangement of nanowires.
 5. The integrated circuitstructure of claim 4, wherein the epitaxial source or drain structuresare discrete epitaxial source or drain structures.
 6. The integratedcircuit structure of claim 4, wherein the epitaxial source or drainstructures are non-discrete epitaxial source or drain structures.
 7. Theintegrated circuit structure of claim 4, wherein the gate stack hasdielectric sidewall spacers, and the epitaxial source or drainstructures are embedded epitaxial source or drain structures extendingbeneath the dielectric sidewall spacers of the gate stack.
 8. Theintegrated circuit structure of claim 4, further comprising: a pair ofconductive contact structures coupled to the epitaxial source or drainstructures.
 9. The integrated circuit structure of claim 8, wherein thepair of conductive contact structures is an asymmetric pair ofconductive contact structures.
 10. The integrated circuit structure ofclaim 1, wherein the vertical arrangement of nanowires is over a fin.11. The integrated circuit structure of claim 1, wherein the gate stackcomprises a high-k gate dielectric layer and a metal gate electrode. 12.An integrated circuit structure, comprising: a first verticalarrangement of nanowires and a second vertical arrangement of nanowiresabove a substrate, the first vertical arrangement of nanowires having agreater number of active nanowires than the second vertical arrangementof nanowires, the first and second vertical arrangements of nanowireshaving co-planar uppermost nanowires and co-planar bottommost nanowires,and the second vertical arrangement of nanowires having an oxidizedbottommost nanowire; a first gate stack over the first verticalarrangement of nanowires; and a second gate stack over the secondvertical arrangement of nanowires and around the oxidized bottommostnanowire.
 13. The integrated circuit structure of claim 12, wherein thenanowires of the first vertical arrangement of nanowires have ahorizontal width the same as a horizontal width of the nanowires of thesecond vertical arrangement of nanowires.
 14. The integrated circuitstructure of claim 12, wherein the nanowires of the first verticalarrangement of nanowires have a horizontal width greater than ahorizontal width of the nanowires of the second vertical arrangement ofnanowires.
 15. The integrated circuit structure of claim 12, wherein thenanowires of the first vertical arrangement of nanowires have ahorizontal width less than a horizontal width of the nanowires of thesecond vertical arrangement of nanowires.
 16. The integrated circuitstructure of claim 12, further comprising: first epitaxial source ordrain structures at ends of the first vertical arrangement of nanowires;and second epitaxial source or drain structures at ends of the secondvertical arrangement of nanowires.
 17. The integrated circuit structureof claim 16, wherein the first and second epitaxial source or drainstructures are discrete first and second epitaxial source or drainstructures.
 18. The integrated circuit structure of claim 16, whereinthe first and second epitaxial source or drain structures arenon-discrete first and second epitaxial source or drain structures. 19.The integrated circuit structure of claim 16, wherein the first gatestack has dielectric sidewall spacers, and the first epitaxial source ordrain structures are first embedded epitaxial source or drain structuresextending beneath the dielectric sidewalls spacers of the first gatestack, and wherein the second gate stack has dielectric sidewallspacers, and the second epitaxial source or drain structures are secondembedded epitaxial source or drain structures extending beneath thedielectric sidewalls spacers of the second gate stack.
 20. Theintegrated circuit structure of claim 16, further comprising: a firstpair of conductive contact structures coupled to the first epitaxialsource or drain structures; and a second pair of conductive contactstructures coupled to the second epitaxial source or drain structures.21. The integrated circuit structure of claim 12, wherein the firstvertical arrangement of nanowires is over a first fin, and the secondvertical arrangement of nanowires is over a second fin.
 22. Theintegrated circuit structure of claim 12, further comprising: a gateendcap isolation structure between and in contact with the first gatestack and the second gate stack.
 23. The integrated circuit structure ofclaim 12, wherein the first and second gate stacks each comprise ahigh-k gate dielectric layer and a metal gate electrode.
 24. A method offabricating an integrated circuit structure, the method comprising:forming a vertical arrangement of active nanowires above a substrate;oxidizing one or more bottommost nanowires of the vertical arrangementof active nanowires but not one or more uppermost nanowires of thevertical arrangement of active nanowires; and forming a gate stackaround the oxidized one or more bottommost nanowires and around the oneor more uppermost nanowires.
 25. The method of claim 24, whereinoxidizing the one or more bottommost nanowires of the verticalarrangement of active nanowires comprises first forming an oxidationcatalyst layer on the one or more bottommost nanowires.